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Park, Youngsin
Center for Superfunctional Materials
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Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

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dc.contributor.author Park, Youngsin ko
dc.contributor.author Chan, Christopher C. S. ko
dc.contributor.author Nuttall, Luke ko
dc.contributor.author Puchtler, Tim J. ko
dc.contributor.author Taylor, Robert A. ko
dc.contributor.author Kim, Nammee ko
dc.contributor.author Jo, Yongcheol ko
dc.contributor.author Im, Hyunsik ko
dc.date.available 2018-07-12T09:31:20Z -
dc.date.created 2018-07-07 ko
dc.date.issued 2018-05 ko
dc.identifier.citation SCIENTIFIC REPORTS, v.8, pp.8124 ko
dc.identifier.issn 2045-2322 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/24360 -
dc.description.abstract We have investigated the emission from InGaN/GaN quantum disks grown on the tip of GaN nanorods. The emission at 3.21 eV from the InGaN quantum disk doesn't show a Stark shift, and it is linearly polarized when excited perpendicular to the growth direction. The degree of linear polarization is about 39.3% due to the anisotropy of the nanostructures. In order to characterize a single nanostructure, the quantum disks were dispersed on a SiO2 substrate patterned with a metal reference grid. By rotating the excitation polarization angle from parallel to perpendicular relative to the nanorods, the variation of overall PL for the 3.21 eV peak was recorded and it clearly showed the degree of linear polarization (DLP) of 51.5%. ko
dc.language 영어 ko
dc.publisher NATURE PUBLISHING GROUP ko
dc.title Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85047643225 ko
dc.identifier.wosid 000433061300006 ko
dc.type.rims ART ko
dc.identifier.doi 10.1038/s41598-018-26642-8 ko
dc.identifier.url https://www.nature.com/articles/s41598-018-26642-8 ko
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