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- Kwon, Soon-Yong
- Frontier, Innovative Nanomaterials & Devices Lab.
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Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission
- Author(s)
- Ko, Suk-Min, Kwack, Ho-Sang, Park, Chunghyun, Yoo, Yang-Seok, Kwon, Soon-Yong, Kim, Hee Jin, Yoon, Euijoon, Dang, Le Si, Cho, Yong-Hoon
- Issued Date
- 2013-11
- Citation
- APPLIED PHYSICS LETTERS, v.103, no.22, pp.222104
- Abstract
- Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.
- Publisher
- AMER INST PHYSICS
- ISSN
- 0003-6951
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