Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission
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- Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission
- Ko, Suk-Min; Kwack, Ho-Sang; Park, Chunghyun; Yoo, Yang-Seok; Kwon, Soon-Yong; Kim, Hee Jin; Yoon, Euijoon; Dang, Le Si; Cho, Yong-Hoon
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.103, no.22, pp.222104 -
- Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.
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