There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 22 | - |
dc.citation.startPage | 222104 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 103 | - |
dc.contributor.author | Ko, Suk-Min | - |
dc.contributor.author | Kwack, Ho-Sang | - |
dc.contributor.author | Park, Chunghyun | - |
dc.contributor.author | Yoo, Yang-Seok | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Kim, Hee Jin | - |
dc.contributor.author | Yoon, Euijoon | - |
dc.contributor.author | Dang, Le Si | - |
dc.contributor.author | Cho, Yong-Hoon | - |
dc.date.accessioned | 2023-12-22T03:14:30Z | - |
dc.date.available | 2023-12-22T03:14:30Z | - |
dc.date.created | 2013-12-10 | - |
dc.date.issued | 2013-11 | - |
dc.description.abstract | Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.103, no.22, pp.222104 | - |
dc.identifier.doi | 10.1063/1.4833917 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-84888591380 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/2420 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4833917 | - |
dc.identifier.wosid | 000327696300035 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.