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Growth Uniformity of Epitaxy Silicon Grown at 200 °C Using 60 MHz Very High Frequency Plasma Enhanced Vapor Phase Epitaxy

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Title
Growth Uniformity of Epitaxy Silicon Grown at 200 °C Using 60 MHz Very High Frequency Plasma Enhanced Vapor Phase Epitaxy
Author
Hong, Ji-EunKim, NamwooYoon, HyunJo, Yim HyunKim, Dong SukSeo, KwanyongKim, Ka-Hyun
Issue Date
2017-11
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.11, pp.8534 - 8538
Abstract
We studied effect of film growth uniformity for low temperature silicon epitaxy using 60 MHz Very High Frequency Chemical Vapor Deposition (VHF PECVD). High quality, high growth rate epitaxy silicon can be obtained at low temperature using VHF PECVD. The major source of the film uniformity appears to be voltage distribution across the plasma electrode, and the uniformity could be improved by using double symmetric power feed using shielded cable. Use of double symmetric power feed around the center of the plasma electrode greatly reduced the voltage non-uniformity, and the shielded cables made stable power transport. As a result, the film thickness uniformity was improved from 21% to 5.8% with our modified reactor configuration.
URI
https://scholarworks.unist.ac.kr/handle/201301/22570
URL
http://www.ingentaconnect.com/contentone/asp/jnn/2017/00000017/00000011/art00124
DOI
10.1166/jnn.2017.15160
ISSN
1533-4880
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