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Near-infrared photoluminescence from ZnO

Author(s)
Wang, MingsongZhou, YajunZhang, YipingKim, Eui JungHahn, Sung HongSeong, Seung Gie
Issued Date
2012-03
DOI
10.1063/1.3692584
URI
https://scholarworks.unist.ac.kr/handle/201301/22300
Fulltext
http://aip.scitation.org/doi/10.1063/1.3692584
Citation
APPLIED PHYSICS LETTERS, v.100, no.10, pp.101906
Abstract
Understanding the defect physics of ZnO is crucial in controlling its properties for various applications. We report the observation of an interesting 1.64 eV near-infrared (NIR) photoluminescence from ZnO and its evolution with annealing temperature. Based on a recent calculation on the transition levels of native point defects of ZnO [A. Janotti and C. G. Van de Walle, Phys. Rev. B 76, 165202 ( 2007)], the NIR emission can be successfully explained by the donor-acceptor transition between V-O and V-Zn and/or the radiative recombination of shallowly trapped electrons with deeply trapped holes at O-i.
Publisher
AMER INST PHYSICS
ISSN
0003-6951

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