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dc.citation.number 10 -
dc.citation.startPage 101906 -
dc.citation.title APPLIED PHYSICS LETTERS -
dc.citation.volume 100 -
dc.contributor.author Wang, Mingsong -
dc.contributor.author Zhou, Yajun -
dc.contributor.author Zhang, Yiping -
dc.contributor.author Kim, Eui Jung -
dc.contributor.author Hahn, Sung Hong -
dc.contributor.author Seong, Seung Gie -
dc.date.accessioned 2023-12-22T05:15:06Z -
dc.date.available 2023-12-22T05:15:06Z -
dc.date.created 2017-07-04 -
dc.date.issued 2012-03 -
dc.description.abstract Understanding the defect physics of ZnO is crucial in controlling its properties for various applications. We report the observation of an interesting 1.64 eV near-infrared (NIR) photoluminescence from ZnO and its evolution with annealing temperature. Based on a recent calculation on the transition levels of native point defects of ZnO [A. Janotti and C. G. Van de Walle, Phys. Rev. B 76, 165202 ( 2007)], the NIR emission can be successfully explained by the donor-acceptor transition between V-O and V-Zn and/or the radiative recombination of shallowly trapped electrons with deeply trapped holes at O-i. -
dc.identifier.bibliographicCitation APPLIED PHYSICS LETTERS, v.100, no.10, pp.101906 -
dc.identifier.doi 10.1063/1.3692584 -
dc.identifier.issn 0003-6951 -
dc.identifier.scopusid 2-s2.0-84863362567 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/22300 -
dc.identifier.url http://aip.scitation.org/doi/10.1063/1.3692584 -
dc.identifier.wosid 000301655500022 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title Near-infrared photoluminescence from ZnO -
dc.type Article -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.relation.journalResearchArea Physics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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