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DC Field | Value | Language |
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dc.citation.number | 10 | - |
dc.citation.startPage | 101906 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 100 | - |
dc.contributor.author | Wang, Mingsong | - |
dc.contributor.author | Zhou, Yajun | - |
dc.contributor.author | Zhang, Yiping | - |
dc.contributor.author | Kim, Eui Jung | - |
dc.contributor.author | Hahn, Sung Hong | - |
dc.contributor.author | Seong, Seung Gie | - |
dc.date.accessioned | 2023-12-22T05:15:06Z | - |
dc.date.available | 2023-12-22T05:15:06Z | - |
dc.date.created | 2017-07-04 | - |
dc.date.issued | 2012-03 | - |
dc.description.abstract | Understanding the defect physics of ZnO is crucial in controlling its properties for various applications. We report the observation of an interesting 1.64 eV near-infrared (NIR) photoluminescence from ZnO and its evolution with annealing temperature. Based on a recent calculation on the transition levels of native point defects of ZnO [A. Janotti and C. G. Van de Walle, Phys. Rev. B 76, 165202 ( 2007)], the NIR emission can be successfully explained by the donor-acceptor transition between V-O and V-Zn and/or the radiative recombination of shallowly trapped electrons with deeply trapped holes at O-i. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.10, pp.101906 | - |
dc.identifier.doi | 10.1063/1.3692584 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-84863362567 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/22300 | - |
dc.identifier.url | http://aip.scitation.org/doi/10.1063/1.3692584 | - |
dc.identifier.wosid | 000301655500022 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Near-infrared photoluminescence from ZnO | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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