File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

조승호

Cho, Seungho
Metal Oxide DEsign Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Selective Synthesis of SiC and SiOx Nanowires by Direct Microwave Irradiation

Author(s)
Oh, EugeneJung, Seung-HoLee, JaegeunCho, SeunghoKim, Hye-JinLee, Bo-RamLee, Kun-HongSong, Kyong-HwaChoi, Chi-HoonHan, Do-Suck
Issued Date
2011-02
DOI
10.1143/JJAP.50.025001
URI
https://scholarworks.unist.ac.kr/handle/201301/22198
Fulltext
http://iopscience.iop.org/article/10.1143/JJAP.50.025001/meta
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.2R, pp.025001
Abstract
We report a facile and novel method for the selective growth of SiC and SiOx nanowires by direct microwave irradiation on a Si substrate under atmospheric pressure. Selective synthesis of the amorphous SiOx or crystalline SiC nanowires was achieved by varying the gas composition in the reactor. The proposed method requires a short reaction time (2 min) with no need for vacuum equipment because the reaction is carried out under atmospheric pressure. High-resolution transmission electron microscope images revealed that the SiOx nanowires were amorphous and that the SiC nanowires were crystalline. Raman spectra showed features typical of nano-sized SiC. On the basis of our results, we propose a growth mechanism of SiC and SiOx nanowires synthesized by direct microwave irradiation.
Publisher
JAPAN SOC APPLIED PHYSICS
ISSN
0021-4922

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.