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DC Field | Value | Language |
---|---|---|
dc.citation.number | 2R | - |
dc.citation.startPage | 025001 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 50 | - |
dc.contributor.author | Oh, Eugene | - |
dc.contributor.author | Jung, Seung-Ho | - |
dc.contributor.author | Lee, Jaegeun | - |
dc.contributor.author | Cho, Seungho | - |
dc.contributor.author | Kim, Hye-Jin | - |
dc.contributor.author | Lee, Bo-Ram | - |
dc.contributor.author | Lee, Kun-Hong | - |
dc.contributor.author | Song, Kyong-Hwa | - |
dc.contributor.author | Choi, Chi-Hoon | - |
dc.contributor.author | Han, Do-Suck | - |
dc.date.accessioned | 2023-12-22T06:36:19Z | - |
dc.date.available | 2023-12-22T06:36:19Z | - |
dc.date.created | 2017-06-09 | - |
dc.date.issued | 2011-02 | - |
dc.description.abstract | We report a facile and novel method for the selective growth of SiC and SiOx nanowires by direct microwave irradiation on a Si substrate under atmospheric pressure. Selective synthesis of the amorphous SiOx or crystalline SiC nanowires was achieved by varying the gas composition in the reactor. The proposed method requires a short reaction time (2 min) with no need for vacuum equipment because the reaction is carried out under atmospheric pressure. High-resolution transmission electron microscope images revealed that the SiOx nanowires were amorphous and that the SiC nanowires were crystalline. Raman spectra showed features typical of nano-sized SiC. On the basis of our results, we propose a growth mechanism of SiC and SiOx nanowires synthesized by direct microwave irradiation. | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.2R, pp.025001 | - |
dc.identifier.doi | 10.1143/JJAP.50.025001 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.scopusid | 2-s2.0-79951965430 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/22198 | - |
dc.identifier.url | http://iopscience.iop.org/article/10.1143/JJAP.50.025001/meta | - |
dc.identifier.wosid | 000287525300044 | - |
dc.language | 영어 | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Selective Synthesis of SiC and SiOx Nanowires by Direct Microwave Irradiation | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.description.journalRegisteredClass | scie | - |
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