File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

김학선

Kim, Hak Sun
Internet of Things System Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

갈륨비소 MESFET 고이득 ` 아날로그 단일 증폭기 ` 설계

Alternative Title
Design of GaAs MESFET High Gain ` Analog Single Stage Amplifier `
Author(s)
김학선김은로이형재
Issued Date
1992-06
URI
https://scholarworks.unist.ac.kr/handle/201301/21643
Fulltext
http://www.dbpia.co.kr/Journal/ArticleDetail/NODE00399566
Citation
전자공학회논문지-B, v.29, no.6, pp.439 - 446
Abstract
In this thesis, The high gain single stage amplifier is designed by the circuit design technique which enhances the output resistance instead of the transconductance of MESFET. We confirmed by Pspice simulation that the bandwidth and voltage gain of the designed amplifier is improved by 85. 8MHz and 10.87dB, respectively than those of the bootstrapped amplifier.
Publisher
대한전자공학회

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.