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- Kim, Hak Sun
- Internet of Things System Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 446 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 439 | - |
| dc.citation.title | 전자공학회논문지-B | - |
| dc.citation.volume | 29 | - |
| dc.contributor.author | 김학선 | - |
| dc.contributor.author | 김은로 | - |
| dc.contributor.author | 이형재 | - |
| dc.date.accessioned | 2023-12-22T13:07:20Z | - |
| dc.date.available | 2023-12-22T13:07:20Z | - |
| dc.date.created | 2017-03-14 | - |
| dc.date.issued | 1992-06 | - |
| dc.description.abstract | In this thesis, The high gain single stage amplifier is designed by the circuit design technique which enhances the output resistance instead of the transconductance of MESFET. We confirmed by Pspice simulation that the bandwidth and voltage gain of the designed amplifier is improved by 85. 8MHz and 10.87dB, respectively than those of the bootstrapped amplifier. | - |
| dc.identifier.bibliographicCitation | 전자공학회논문지-B, v.29, no.6, pp.439 - 446 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21643 | - |
| dc.identifier.url | http://www.dbpia.co.kr/Journal/ArticleDetail/NODE00399566 | - |
| dc.language | 한국어 | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title.alternative | Design of GaAs MESFET High Gain ` Analog Single Stage Amplifier ` | - |
| dc.title | 갈륨비소 MESFET 고이득 ` 아날로그 단일 증폭기 ` 설계 | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | other | - |
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