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김학선

Kim, Hak Sun
Internet of Things System Lab.
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GaAs MESFET를 이용한 광대역 연산증폭기 회로의 설계 및 Simulation

Alternative Title
A Study on the Design of Broadband Operational Amplifier and Circuit Simulation Using GaAs MESFETs
Author(s)
임명호김학선최병하김은로이형재
Issued Date
1991-08
URI
https://scholarworks.unist.ac.kr/handle/201301/21638
Fulltext
http://www.dbpia.co.kr/Article/NODE00398431
Citation
전자공학회논문지, v.28, no.8, pp.647 - 655
Abstract
In this paper, a high gain operational amplifier using GaAs MESFETs that have intrinsically the low voltage gain(gmrds) at high frequencies has been designed and simulated. The amplifier is composed of a differential input stage with multi-current path and is internally compensated. An open loop gain of 35.7dB a 500 MHz and 51dB at 100MHZ was archived by using gain stage with self-bootstrap. The result of Pspice simulation show that designed OP AMP has a higher gain at high frequncies and the improved phase margin of 80 by using internal compensation capacitor.
Publisher
대한전자공학회
ISSN
1016-135X

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