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- Kim, Hak Sun
- Internet of Things System Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 655 | - |
| dc.citation.number | 8 | - |
| dc.citation.startPage | 647 | - |
| dc.citation.title | 전자공학회논문지 | - |
| dc.citation.volume | 28 | - |
| dc.contributor.author | 임명호 | - |
| dc.contributor.author | 김학선 | - |
| dc.contributor.author | 최병하 | - |
| dc.contributor.author | 김은로 | - |
| dc.contributor.author | 이형재 | - |
| dc.date.accessioned | 2023-12-22T13:08:10Z | - |
| dc.date.available | 2023-12-22T13:08:10Z | - |
| dc.date.created | 2017-03-14 | - |
| dc.date.issued | 1991-08 | - |
| dc.description.abstract | In this paper, a high gain operational amplifier using GaAs MESFETs that have intrinsically the low voltage gain(gmrds) at high frequencies has been designed and simulated. The amplifier is composed of a differential input stage with multi-current path and is internally compensated. An open loop gain of 35.7dB a 500 MHz and 51dB at 100MHZ was archived by using gain stage with self-bootstrap. The result of Pspice simulation show that designed OP AMP has a higher gain at high frequncies and the improved phase margin of 80 by using internal compensation capacitor. | - |
| dc.identifier.bibliographicCitation | 전자공학회논문지, v.28, no.8, pp.647 - 655 | - |
| dc.identifier.issn | 1016-135X | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21638 | - |
| dc.identifier.url | http://www.dbpia.co.kr/Article/NODE00398431 | - |
| dc.language | 한국어 | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title.alternative | A Study on the Design of Broadband Operational Amplifier and Circuit Simulation Using GaAs MESFETs | - |
| dc.title | GaAs MESFET를 이용한 광대역 연산증폭기 회로의 설계 및 Simulation | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | other | - |
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