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Shin, Tae Joo
UNIST Synchrotron Radiation Research Laboratory
Research Interests
  • Synchrotron Radiation Application Researches

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Flat-Lying Semiconductor-Insulator Interfacial Layer in DNTT Thin Films

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Title
Flat-Lying Semiconductor-Insulator Interfacial Layer in DNTT Thin Films
Author
Jung, Min-CherlLeyden, Matthew R.Nikiforov, Gueorgui O.Lee, Michael V.Lee, Han-KooShin, Tae JooTakimiya, KazuoQi, Yabing
Issue Date
2015-01
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v.7, no.3, pp.1833 - 1840
Abstract
The molecular order of organic semiconductors at the gate dielectric is the most critical factor determining carrier mobility in thin film transistors since the conducting channel forms at the dielectric interface. Despite its fundamental importance, this semiconductor-insulator interface is not well understood, primarily because it is buried within the device. We fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) thin film transistors by thermal evaporation in vacuum onto substrates held at different temperatures and systematically correlated the extracted charge mobility to the crystal grain size and crystal orientation. As a result, we identify a molecular layer of flat-lying DNTT molecules at the semiconductor-insulator interface. It is likely that such a layer might form in other material systems as well, and could be one of the factors reducing charge transport. Controlling this interfacial flat-lying layer may raise the ultimate possible device performance for thin film devices
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DOI
10.1021/am507528e
ISSN
1944-8244
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UCRF_Journal Papers
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