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Kang, Seok Ju
Smart Materials for Energy Lab.
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Wafer-Scale Arrays of Nonvolatile Polymer Memories with Microprinted Semiconducting Small Molecule/Polymer Blends

Author(s)
Bae, InsungHwang, Sun KakKim, Richard HahnkeeKang, Seok JuPark, Cheolmin
Issued Date
2013-11
DOI
10.1021/am402852y
URI
https://scholarworks.unist.ac.kr/handle/201301/18434
Fulltext
http://pubs.acs.org/doi/abs/10.1021/am402852y
Citation
ACS APPLIED MATERIALS & INTERFACES, v.5, no.21, pp.10696 - 10704
Abstract
Nonvolatile ferroelectric-gate field-effect transistors (Fe-FETs) memories with solution-processed ferroelectric polymers are of great interest because of their potential for use in low-cost flexible devices. In particular, the development of a process for patterning high-performance semiconducting channel layers with mechanical flexibility is essential not only for proper cell-to-cell isolation but also for arrays of flexible nonvolatile memories. We demonstrate a robust route for printing large-scale micropatterns of solution-processed semiconducting small molecules/insulating polymer blends for high performance arrays of nonvolatile ferroelectric polymer memory. The nonvolatile memory devices are based on top-gate/bottom-contact Fe-FET with ferroelectric polymer-insulator and micropatterned semiconducting blend channels. Printed micropatterns of a thin blended semiconducting film were achieved by our selective contact evaporation printing, with which semiconducting small molecules in contact with a micropatterned elastomeric poly(dimethylsiloxane) (PDMS) mold were preferentially evaporated and absorbed into the PDMS mold while insulating polymer remained intact. Well-defined micrometer-scale patterns with various shapes and dimensions were readily developed over a very large area on a 4 in. wafer, allowing for fabrication of large-scale printed arrays of Fe-FETs with highly uniform device performance. We statistically analyzed the memory properties of Fe-FETs, including ON/OFF ratio, operation voltage, retention, and endurance, as a function of the micropattern dimensions of the semiconducting films. Furthermore, roll-up memory arrays were produced by successfully detaching large-area Fe-FETs printed on a flexible substrate with a transient adhesive layer from a hard substrate and subsequently transferring them to a nonplanar surface
Publisher
AMER CHEMICAL SOC
ISSN
1944-8244

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