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DC Field | Value | Language |
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dc.citation.endPage | 10704 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 10696 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 5 | - |
dc.contributor.author | Bae, Insung | - |
dc.contributor.author | Hwang, Sun Kak | - |
dc.contributor.author | Kim, Richard Hahnkee | - |
dc.contributor.author | Kang, Seok Ju | - |
dc.contributor.author | Park, Cheolmin | - |
dc.date.accessioned | 2023-12-22T03:13:35Z | - |
dc.date.available | 2023-12-22T03:13:35Z | - |
dc.date.created | 2015-08-24 | - |
dc.date.issued | 2013-11 | - |
dc.description.abstract | Nonvolatile ferroelectric-gate field-effect transistors (Fe-FETs) memories with solution-processed ferroelectric polymers are of great interest because of their potential for use in low-cost flexible devices. In particular, the development of a process for patterning high-performance semiconducting channel layers with mechanical flexibility is essential not only for proper cell-to-cell isolation but also for arrays of flexible nonvolatile memories. We demonstrate a robust route for printing large-scale micropatterns of solution-processed semiconducting small molecules/insulating polymer blends for high performance arrays of nonvolatile ferroelectric polymer memory. The nonvolatile memory devices are based on top-gate/bottom-contact Fe-FET with ferroelectric polymer-insulator and micropatterned semiconducting blend channels. Printed micropatterns of a thin blended semiconducting film were achieved by our selective contact evaporation printing, with which semiconducting small molecules in contact with a micropatterned elastomeric poly(dimethylsiloxane) (PDMS) mold were preferentially evaporated and absorbed into the PDMS mold while insulating polymer remained intact. Well-defined micrometer-scale patterns with various shapes and dimensions were readily developed over a very large area on a 4 in. wafer, allowing for fabrication of large-scale printed arrays of Fe-FETs with highly uniform device performance. We statistically analyzed the memory properties of Fe-FETs, including ON/OFF ratio, operation voltage, retention, and endurance, as a function of the micropattern dimensions of the semiconducting films. Furthermore, roll-up memory arrays were produced by successfully detaching large-area Fe-FETs printed on a flexible substrate with a transient adhesive layer from a hard substrate and subsequently transferring them to a nonplanar surface | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.5, no.21, pp.10696 - 10704 | - |
dc.identifier.doi | 10.1021/am402852y | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-84887591081 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/18434 | - |
dc.identifier.url | http://pubs.acs.org/doi/abs/10.1021/am402852y | - |
dc.identifier.wosid | 000327103500039 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Wafer-Scale Arrays of Nonvolatile Polymer Memories with Microprinted Semiconducting Small Molecule/Polymer Blends | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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