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Lee, Zonghoon
Atomic-Scale Electron Microscopy (ASEM) Lab
Research Interests
  • Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials

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Uniform, large-area self-limiting layer synthesis of tungsten diselenide

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Title
Uniform, large-area self-limiting layer synthesis of tungsten diselenide
Author
Park, KyunamKim, YoungjunSong, Jeong-GyuKim, Seok JinLee, Chang WanRyu, Gyeong HeeLee, ZonghoonPark, JusangKim, Hyungjun
Issue Date
2016-03
Publisher
IOP PUBLISHING LTD
Citation
2D MATERIALS, v.3, no.1, pp.014004
Abstract
A process for the self-limited layer synthesis (SLS) of WSe2 on SiO2 substrates has been developed that provides systematic layer number controllability with micrometer-scale (>90%) and wafer-scale (similar to 8 cm) uniformity suitable electronic and optoelectronic device applications. This was confirmed by the fabrication and testing of a WSe2 back-gated field effect transistor (FET) using Pd (30 nm) as the contact metal, which exhibited p-type behavior with an on/off ratio of similar to 10(6) and a field-effect hole mobility of 2.2 cm(2) V-1 s(-1) value, which was higher than has been reported for WSe2-based FETs produced by conventional chemical vapor deposition. On the basis of these results, it is proposed that the SLS method is universally applicable to a range of device applications.
URI
https://scholarworks.unist.ac.kr/handle/201301/18222
URL
http://iopscience.iop.org/article/10.1088/2053-1583/3/1/014004/meta;jsessionid=501D231E9F54A77BB78DDA0AD89BACAD.c1.iopscience.cld.iop.org
DOI
10.1088/2053-1583/3/1/014004
ISSN
2053-1583
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