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DC Field | Value | Language |
---|---|---|
dc.citation.number | 1 | - |
dc.citation.startPage | 014004 | - |
dc.citation.title | 2D MATERIALS | - |
dc.citation.volume | 3 | - |
dc.contributor.author | Park, Kyunam | - |
dc.contributor.author | Kim, Youngjun | - |
dc.contributor.author | Song, Jeong-Gyu | - |
dc.contributor.author | Kim, Seok Jin | - |
dc.contributor.author | Lee, Chang Wan | - |
dc.contributor.author | Ryu, Gyeong Hee | - |
dc.contributor.author | Lee, Zonghoon | - |
dc.contributor.author | Park, Jusang | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.date.accessioned | 2023-12-22T00:08:17Z | - |
dc.date.available | 2023-12-22T00:08:17Z | - |
dc.date.created | 2016-01-26 | - |
dc.date.issued | 2016-03 | - |
dc.description.abstract | A process for the self-limited layer synthesis (SLS) of WSe2 on SiO2 substrates has been developed that provides systematic layer number controllability with micrometer-scale (>90%) and wafer-scale (similar to 8 cm) uniformity suitable electronic and optoelectronic device applications. This was confirmed by the fabrication and testing of a WSe2 back-gated field effect transistor (FET) using Pd (30 nm) as the contact metal, which exhibited p-type behavior with an on/off ratio of similar to 10(6) and a field-effect hole mobility of 2.2 cm(2) V-1 s(-1) value, which was higher than has been reported for WSe2-based FETs produced by conventional chemical vapor deposition. On the basis of these results, it is proposed that the SLS method is universally applicable to a range of device applications. | - |
dc.identifier.bibliographicCitation | 2D MATERIALS, v.3, no.1, pp.014004 | - |
dc.identifier.doi | 10.1088/2053-1583/3/1/014004 | - |
dc.identifier.issn | 2053-1583 | - |
dc.identifier.scopusid | 2-s2.0-84964403038 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/18222 | - |
dc.identifier.url | http://iopscience.iop.org/article/10.1088/2053-1583/3/1/014004/meta;jsessionid=501D231E9F54A77BB78DDA0AD89BACAD.c1.iopscience.cld.iop.org | - |
dc.identifier.wosid | 000373936300016 | - |
dc.language | 영어 | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Uniform, large-area self-limiting layer synthesis of tungsten diselenide | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Tungsten diselenide | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | transition metal dichalcogenide | - |
dc.subject.keywordAuthor | two-dimensional material | - |
dc.subject.keywordAuthor | physical adsorption | - |
dc.subject.keywordPlus | WSE2 | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | DEPOSITION | - |
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