High-Performance Plasmonic THz Detector Based on Asymmetric FET with Vertically Integrated Antenna in CMOS Technology

Abstract

We report a high-performance plasmonic terahertz (THz) detector based on antenna-coupled asymmetric field-effect transistor (FET) structure using 65-nm CMOS technology. By designing asymmetric FET on a self-aligned poly-Si gate structure, more enhanced channel charge asymmetry between source and drain has been obtained in comparison with non-self-aligned metal gate structure of our previous work. In addition, using vertically-integrated patch antenna, which is designed for 0.2 THz resonance frequency, we demonstrated the highly enhanced detection performance with responsivity (Rv) of 1.5 kV/W and noise-equivalent-power (NEP) of 15 pW/Hz0.5 at 0.2 THz.