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Lee, Zonghoon
Atomic-Scale Electron Microscopy (ASEM) Lab
Research Interests
  • Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials

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Ferroelectric Tunnel Junction for Dense Cross-Point Arrays

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Title
Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
Author
Lee, Hong-SubHan, WoojeChung, Hee-YoonRozenberg, MarceloKim, KangsikLee, ZonghoonYeom, Geun YoungPark, Hyung-Ho
Issue Date
2015-10
Publisher
American Chemical Society
Citation
ACS APPLIED MATERIALS & INTERFACES, v.7, no.40, pp.22348 - 22354
Abstract
Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F(2) cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Delta Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity.
URI
https://scholarworks.unist.ac.kr/handle/201301/17691
URL
http://pubs.acs.org/doi/10.1021/acsami.5b06117
DOI
10.1021/acsami.5b06117
ISSN
1944-8244
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