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DC Field | Value | Language |
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dc.citation.endPage | 22354 | - |
dc.citation.number | 40 | - |
dc.citation.startPage | 22348 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 7 | - |
dc.contributor.author | Lee, Hong-Sub | - |
dc.contributor.author | Han, Wooje | - |
dc.contributor.author | Chung, Hee-Yoon | - |
dc.contributor.author | Rozenberg, Marcelo | - |
dc.contributor.author | Kim, Kangsik | - |
dc.contributor.author | Lee, Zonghoon | - |
dc.contributor.author | Yeom, Geun Young | - |
dc.contributor.author | Park, Hyung-Ho | - |
dc.date.accessioned | 2023-12-22T00:40:05Z | - |
dc.date.available | 2023-12-22T00:40:05Z | - |
dc.date.created | 2015-11-04 | - |
dc.date.issued | 2015-10 | - |
dc.description.abstract | Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F(2) cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Delta Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.7, no.40, pp.22348 - 22354 | - |
dc.identifier.doi | 10.1021/acsami.5b06117 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-84944345162 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/17691 | - |
dc.identifier.url | http://pubs.acs.org/doi/10.1021/acsami.5b06117 | - |
dc.identifier.wosid | 000363001500029 | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Ferroelectric Tunnel Junction for Dense Cross-Point Arrays | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | cross point array structure | - |
dc.subject.keywordAuthor | ferroelectric tunnel junction | - |
dc.subject.keywordAuthor | memristor | - |
dc.subject.keywordAuthor | perovskite manganite family | - |
dc.subject.keywordAuthor | sneak current | - |
dc.subject.keywordPlus | DEAD-LAYER | - |
dc.subject.keywordPlus | ELECTRORESISTANCE | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | PROSPECTS | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | MEMORY | - |
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