Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application
Cited 20 times inCited 21 times in
- Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application
- Ryu, Seong-Wan; Lee, Jongwon; Han, Jin-Woo; Kim, Sungho; Choi, Yang-Kyu
- RETENTION; DEVICES; OXIDE; GATE; Au and Ni; double-stacked nanocrystal (DSNC); energy band lineup; flash memory; nanocrystal (NC); nanocrystal floating-gate memory (NFGM); nonvolatile memory (NVM); program/erase (P/E) speed; retention time
- Issue Date
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.3, pp.377 - 382
- A double-stacked nanocrystal (DSNC) Hash memory is presented for improvement of both program/erase speed and data retention time. Four combinations of nickel (Ni) and gold (An) (Ni/Ni, Au/Au, Ni/Au, and Au/Ni) are used as charge storage DSNC materials and are compared from the perspective of memory performance, Through experimental results for P/E efficiency and retention time, the optimized energy band lineup for faster P/E, and longer charge retention is presented. A combination of a deep potential well at the top and a shallow potential well at the bottom exhibits optimized performance in P/E, and this combination also shows the longest data retention characteristics.
- ; Go to Link
- Appears in Collections:
- EE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.