Geometric Effects of Nanocrystals in Nonvolatile Memory Using Block Copolymer Nanotemplate
Cited 2 times inCited 3 times in
- Geometric Effects of Nanocrystals in Nonvolatile Memory Using Block Copolymer Nanotemplate
- Lee, Jongwon; Ryu, Seong-Wan; Shin, Dong Ok; Kim, Bong Hoon; Kim, Sang Ouk; Choi, Yang-Kyu
- ELECTRON; Nonvolatile memories (NVM); Nanocrystal (NC); Geometric effect; Block copolymer (BCP) nanotemplate; Modeling; Capacitive-coupling ratio
- Issue Date
- PERGAMON-ELSEVIER SCIENCE LTD
- SOLID-STATE ELECTRONICS, v.53, no.6, pp.640 - 643
- This study describes geometric characteristics of a nonvolatile memory (NVM) device with a designed chromium (Cr) nanocrystal (NC) floating gate. By using a block copolymer (BCP) nanotemplate as a mask layer, cone-shaped NCs and disc-shaped NCs were formed. It Was found that the NVM device using the cone-shaped NC had a better program efficiency than that of the device using the disc-shaped one. This trend was verified by a theoretical model, which considered an effect of the capacitive-coupling ratio between a control gate and a NC floating gate. (C) 2009 Elsevier Ltd. All rights reserved.
- ; Go to Link
- Appears in Collections:
- EE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.