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DC Field | Value | Language |
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dc.citation.endPage | 643 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 640 | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 53 | - |
dc.contributor.author | Lee, Jongwon | - |
dc.contributor.author | Ryu, Seong-Wan | - |
dc.contributor.author | Shin, Dong Ok | - |
dc.contributor.author | Kim, Bong Hoon | - |
dc.contributor.author | Kim, Sang Ouk | - |
dc.contributor.author | Choi, Yang-Kyu | - |
dc.date.accessioned | 2023-12-22T08:06:11Z | - |
dc.date.available | 2023-12-22T08:06:11Z | - |
dc.date.created | 2015-09-16 | - |
dc.date.issued | 2009-06 | - |
dc.description.abstract | This study describes geometric characteristics of a nonvolatile memory (NVM) device with a designed chromium (Cr) nanocrystal (NC) floating gate. By using a block copolymer (BCP) nanotemplate as a mask layer, cone-shaped NCs and disc-shaped NCs were formed. It Was found that the NVM device using the cone-shaped NC had a better program efficiency than that of the device using the disc-shaped one. This trend was verified by a theoretical model, which considered an effect of the capacitive-coupling ratio between a control gate and a NC floating gate. (C) 2009 Elsevier Ltd. All rights reserved. | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.53, no.6, pp.640 - 643 | - |
dc.identifier.doi | 10.1016/j.sse.2009.03.007 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.scopusid | 2-s2.0-67349097152 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/17230 | - |
dc.identifier.url | http://www.sciencedirect.com/science/article/pii/S0038110109000690 | - |
dc.identifier.wosid | 000267196500015 | - |
dc.language | 영어 | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Geometric Effects of Nanocrystals in Nonvolatile Memory Using Block Copolymer Nanotemplate | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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