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Lee, Jongwon
Nanostructured Photonic Devices Lab.
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dc.citation.endPage 643 -
dc.citation.number 6 -
dc.citation.startPage 640 -
dc.citation.title SOLID-STATE ELECTRONICS -
dc.citation.volume 53 -
dc.contributor.author Lee, Jongwon -
dc.contributor.author Ryu, Seong-Wan -
dc.contributor.author Shin, Dong Ok -
dc.contributor.author Kim, Bong Hoon -
dc.contributor.author Kim, Sang Ouk -
dc.contributor.author Choi, Yang-Kyu -
dc.date.accessioned 2023-12-22T08:06:11Z -
dc.date.available 2023-12-22T08:06:11Z -
dc.date.created 2015-09-16 -
dc.date.issued 2009-06 -
dc.description.abstract This study describes geometric characteristics of a nonvolatile memory (NVM) device with a designed chromium (Cr) nanocrystal (NC) floating gate. By using a block copolymer (BCP) nanotemplate as a mask layer, cone-shaped NCs and disc-shaped NCs were formed. It Was found that the NVM device using the cone-shaped NC had a better program efficiency than that of the device using the disc-shaped one. This trend was verified by a theoretical model, which considered an effect of the capacitive-coupling ratio between a control gate and a NC floating gate. (C) 2009 Elsevier Ltd. All rights reserved. -
dc.identifier.bibliographicCitation SOLID-STATE ELECTRONICS, v.53, no.6, pp.640 - 643 -
dc.identifier.doi 10.1016/j.sse.2009.03.007 -
dc.identifier.issn 0038-1101 -
dc.identifier.scopusid 2-s2.0-67349097152 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/17230 -
dc.identifier.url http://www.sciencedirect.com/science/article/pii/S0038110109000690 -
dc.identifier.wosid 000267196500015 -
dc.language 영어 -
dc.publisher PERGAMON-ELSEVIER SCIENCE LTD -
dc.title Geometric Effects of Nanocrystals in Nonvolatile Memory Using Block Copolymer Nanotemplate -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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