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Park, Lee Soon
School of Materials Science and Engineering
Research Interests
  • Flexible OLED new materials, process and fabrication
  • Touch Screen Panel(TSP) new materials and process new materials and process
  • Nano-materials synthesis and application (Ag nano-wire and metal mesh electrode)

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Effects of Deuterium-Plasma Treatment at the a-Si:H/a-SiN:H Interface on the Field-Effect Mobility of a Thin-Film Transistor

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Title
Effects of Deuterium-Plasma Treatment at the a-Si:H/a-SiN:H Interface on the Field-Effect Mobility of a Thin-Film Transistor
Author
Bae, Seong-ChanOh, Sun-TekPark, Lee SoonChoi, Sie-YoungMoon, Kyo-Ho
Keywords
Deuterium, Mobility, TFT
Issue Date
2002-12
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.1063 - 1067
Abstract
The effects of deuterium-plasma treatment on the electrical characteristics of an inverted staggered thin-film transistor (TFT) were investigated. The deuterium-plasma treatment was applied at the a-Si:H/a-SiN:H interface, and its effects were compared with those for a hydrogen-plasma treatment under the same plasma-treatment conditions. The thin-film transistor without plasmatreatment of the a-SiN:H exhibited a field effect mobility of 0.09 cm2/V·s while the TFT with hydrogen-plasma treatment for 20 min had a mobility of 0.38 cm2/V·s, and the TFT with using deuterium-plasma treatment for 20 min had a higher mobility of 0.54 cm2/V·s. The surface roughness of a-SiN:H was found to be closely connected with the field-effect mobility, and deuterium plasma treatment at the a-Si:H/a-SiN:H interface was found to be an effective way to increase the field effect mobility of an a-Si:H TFT.
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DOI
10.3938/jkps.41.1063
ISSN
0374-4884
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