Effects of Deuterium-Plasma Treatment at the a-Si:H/a-SiN:H Interface on the Field-Effect Mobility of a Thin-Film Transistor
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- Effects of Deuterium-Plasma Treatment at the a-Si:H/a-SiN:H Interface on the Field-Effect Mobility of a Thin-Film Transistor
- Bae, Seong-Chan; Oh, Sun-Tek; Park, Lee Soon; Choi, Sie-Young; Moon, Kyo-Ho
- Deuterium, Mobility, TFT
- Issue Date
- KOREAN PHYSICAL SOC
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.1063 - 1067
- The effects of deuterium-plasma treatment on the electrical characteristics of an inverted staggered thin-film transistor (TFT) were investigated. The deuterium-plasma treatment was applied at the a-Si:H/a-SiN:H interface, and its effects were compared with those for a hydrogen-plasma treatment under the same plasma-treatment conditions. The thin-film transistor without plasmatreatment of the a-SiN:H exhibited a field effect mobility of 0.09 cm2/V·s while the TFT with hydrogen-plasma treatment for 20 min had a mobility of 0.38 cm2/V·s, and the TFT with using deuterium-plasma treatment for 20 min had a higher mobility of 0.54 cm2/V·s. The surface roughness of a-SiN:H was found to be closely connected with the field-effect mobility, and deuterium plasma treatment at the a-Si:H/a-SiN:H interface was found to be an effective way to increase the field effect mobility of an a-Si:H TFT.
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