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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 1067 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 1063 | - |
| dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.citation.volume | 41 | - |
| dc.contributor.author | Bae, Seong-Chan | - |
| dc.contributor.author | Oh, Sun-Tek | - |
| dc.contributor.author | Park, Lee Soon | - |
| dc.contributor.author | Choi, Sie-Young | - |
| dc.contributor.author | Moon, Kyo-Ho | - |
| dc.date.accessioned | 2023-12-22T11:36:22Z | - |
| dc.date.available | 2023-12-22T11:36:22Z | - |
| dc.date.created | 2015-09-21 | - |
| dc.date.issued | 2002-12 | - |
| dc.description.abstract | The effects of deuterium-plasma treatment on the electrical characteristics of an inverted staggered thin-film transistor (TFT) were investigated. The deuterium-plasma treatment was applied at the a-Si:H/a-SiN:H interface, and its effects were compared with those for a hydrogen-plasma treatment under the same plasma-treatment conditions. The thin-film transistor without plasmatreatment of the a-SiN:H exhibited a field effect mobility of 0.09 cm2/V·s while the TFT with hydrogen-plasma treatment for 20 min had a mobility of 0.38 cm2/V·s, and the TFT with using deuterium-plasma treatment for 20 min had a higher mobility of 0.54 cm2/V·s. The surface roughness of a-SiN:H was found to be closely connected with the field-effect mobility, and deuterium plasma treatment at the a-Si:H/a-SiN:H interface was found to be an effective way to increase the field effect mobility of an a-Si:H TFT. | - |
| dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.1063 - 1067 | - |
| dc.identifier.doi | 10.3938/jkps.41.1063 | - |
| dc.identifier.issn | 0374-4884 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/17016 | - |
| dc.identifier.url | http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=68189B3B-272A-442A-B1F7-84F63D40A909&globalmenu=3&localmenu=10 | - |
| dc.language | 영어 | - |
| dc.publisher | KOREAN PHYSICAL SOC | - |
| dc.title | Effects of Deuterium-Plasma Treatment at the a-Si:H/a-SiN:H Interface on the Field-Effect Mobility of a Thin-Film Transistor | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | scopus | - |
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