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Lee, Geunsik
Electronic Structure and Transport in Condensed Materials
Research Interests
  • open quantum system, non-equilibrium electron transport
  • electron correlation, dynamical mean field theory
  • 2D materials, metal complexes

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Nanoclusters of Group-III Metal Atoms on Si(111)-7 x 7

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Title
Nanoclusters of Group-III Metal Atoms on Si(111)-7 x 7
Other Titles
Nanoclusters of Group-III Metal Atoms on Si(111)-7 x 7
Author
Lee, GeunsikChung, J. W.Kim, Jai Sam
Keywords
Group III Metals; Surface Magic Clusters; Si(111)-7 x 7; Simulations; Density Functional Theory Method
Issue Date
2009-06
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, v.6, no.6, pp.1311 - 1319
Abstract
The realization of perfectly ordered clusters has been achieved recently for various adsorbates using appropriate substrates such as Si(111)-7 x 7, which has great potential for future nanotechnology applications. In this article, we review the recent experimental and theoretical studies on surface magic clusters (SMCs) formed on Si(111)-7 x 7, focusing on Group III SMCs as a testing ground for an understanding of the underlying chemical and physical mechanisms. Although the atomic geometrical structures of the Al, Ga, and In clusters have been found to be identical, the Thallium cluster, formed at room temperature, is intriguing, complicated mostly by Tl atom's mobile nature. Exploiting accurate ab initio studies, we elucidate the mechanism of SMC formation for the Al, Ga, and In clusters. We also show the Tl cluster's favorable structure and origin, and estimate the hopping frequency of Tl adatoms
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DOI
10.1166/jctn.2009.1180
ISSN
1546-1955
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PHY_Journal Papers
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