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Lee, Geunsik
Electronic Structure and Transport in Condensed Materials
Research Interests
  • open quantum system, non-equilibrium electron transport
  • electron correlation, dynamical mean field theory
  • 2D materials, metal complexes


Nanoclusters of Group-III Metal Atoms on Si(111)-7 x 7

DC Field Value Language Lee, Geunsik ko Chung, J. W. ko Kim, Jai Sam ko 2015-08-03T07:46:00Z - 2015-08-03 ko 2009-06 ko
dc.identifier.citation JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, v.6, no.6, pp.1311 - 1319 ko
dc.identifier.issn 1546-1955 ko
dc.identifier.uri -
dc.description.abstract The realization of perfectly ordered clusters has been achieved recently for various adsorbates using appropriate substrates such as Si(111)-7 x 7, which has great potential for future nanotechnology applications. In this article, we review the recent experimental and theoretical studies on surface magic clusters (SMCs) formed on Si(111)-7 x 7, focusing on Group III SMCs as a testing ground for an understanding of the underlying chemical and physical mechanisms. Although the atomic geometrical structures of the Al, Ga, and In clusters have been found to be identical, the Thallium cluster, formed at room temperature, is intriguing, complicated mostly by Tl atom's mobile nature. Exploiting accurate ab initio studies, we elucidate the mechanism of SMC formation for the Al, Ga, and In clusters. We also show the Tl cluster's favorable structure and origin, and estimate the hopping frequency of Tl adatoms ko
dc.description.statementofresponsibility open -
dc.language 영어 ko
dc.title Nanoclusters of Group-III Metal Atoms on Si(111)-7 x 7 ko
dc.title.alternative Nanoclusters of Group-III Metal Atoms on Si(111)-7 x 7 ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-67549115215 ko
dc.identifier.wosid 000265745100011 ko
dc.type.rims ART ko
dc.description.wostc 1 *
dc.description.scopustc 2 * 2015-12-28 * 2015-11-04 *
dc.identifier.doi 10.1166/jctn.2009.1180 ko
dc.identifier.url ko
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