Extended design window of resonant plasma-wave transistor for terahertz emitter by considering degenerate carrier velocity model with Fermi-Dirac distribution
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- Extended design window of resonant plasma-wave transistor for terahertz emitter by considering degenerate carrier velocity model with Fermi-Dirac distribution
- Park, Jong Yul; Kim, Sung-Ho; Kim, Kyung Rok
- Issue Date
- JAPAN SOC APPLIED PHYSICS
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.6, pp.06FG08-1
- In this work, we propose extended design window which is helpful to judge whether the plasma-wave transistor (PWT) operates as a resonant terahertz (THz) electromagnetic (EM) wave emitter. When metal-oxide-semiconductor field-effect transistor (MOSFET) is on strong inversion which is believed to be an operation regime of PWT THz emitter, Boltzmann statistics is no longer valid and degenerate Fermi-Dirac distribution should be considered. Based on degenerate carrier velocity model, we report the increased maximum channel length (Lmax) to 17 nm for strained silicon (s-Si) PWT with assuming μ = 500cm2·V-1·s-1. As mobility is enhanced, it is possible to observe two emission spectrums [fundamental (N = 1) and third (N = 3) harmonics] in a specific operation range. Theoretically, increment of Lmax for enhanced μ is limited to near 35nm by the Pauli's principle in the case of s-Si PWT. This theoretical value of Lmax should be compromised by considering actual PWT operation voltage for gate oxide breakdown.
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