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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Extended design window of resonant plasma-wave transistor for terahertz emitter by considering degenerate carrier velocity model with Fermi-Dirac distribution

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Title
Extended design window of resonant plasma-wave transistor for terahertz emitter by considering degenerate carrier velocity model with Fermi-Dirac distribution
Author
Park, Jong YulKim, Sung-HoKim, Kyung Rok
Issue Date
2015-06
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.6, pp.06FG08-1
Abstract
In this work, we propose extended design window which is helpful to judge whether the plasma-wave transistor (PWT) operates as a resonant terahertz (THz) electromagnetic (EM) wave emitter. When metal-oxide-semiconductor field-effect transistor (MOSFET) is on strong inversion which is believed to be an operation regime of PWT THz emitter, Boltzmann statistics is no longer valid and degenerate Fermi-Dirac distribution should be considered. Based on degenerate carrier velocity model, we report the increased maximum channel length (Lmax) to 17 nm for strained silicon (s-Si) PWT with assuming μ = 500cm2·V-1·s-1. As mobility is enhanced, it is possible to observe two emission spectrums [fundamental (N = 1) and third (N = 3) harmonics] in a specific operation range. Theoretically, increment of Lmax for enhanced μ is limited to near 35nm by the Pauli's principle in the case of s-Si PWT. This theoretical value of Lmax should be compromised by considering actual PWT operation voltage for gate oxide breakdown.
URI
https://scholarworks.unist.ac.kr/handle/201301/12771
URL
http://iopscience.iop.org/1347-4065/54/6S1/06FG08/
DOI
10.7567/JJAP.54.06FG08
ISSN
0021-4922
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