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DC Field | Value | Language |
---|---|---|
dc.citation.number | 6 | - |
dc.citation.startPage | 06FG08-1 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 54 | - |
dc.contributor.author | Park, Jong Yul | - |
dc.contributor.author | Kim, Sung-Ho | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.date.accessioned | 2023-12-22T01:11:20Z | - |
dc.date.available | 2023-12-22T01:11:20Z | - |
dc.date.created | 2015-07-13 | - |
dc.date.issued | 2015-06 | - |
dc.description.abstract | In this work, we propose extended design window which is helpful to judge whether the plasma-wave transistor (PWT) operates as a resonant terahertz (THz) electromagnetic (EM) wave emitter. When metal-oxide-semiconductor field-effect transistor (MOSFET) is on strong inversion which is believed to be an operation regime of PWT THz emitter, Boltzmann statistics is no longer valid and degenerate Fermi-Dirac distribution should be considered. Based on degenerate carrier velocity model, we report the increased maximum channel length (Lmax) to 17 nm for strained silicon (s-Si) PWT with assuming μ = 500cm2·V-1·s-1. As mobility is enhanced, it is possible to observe two emission spectrums [fundamental (N = 1) and third (N = 3) harmonics] in a specific operation range. Theoretically, increment of Lmax for enhanced μ is limited to near 35nm by the Pauli's principle in the case of s-Si PWT. This theoretical value of Lmax should be compromised by considering actual PWT operation voltage for gate oxide breakdown. | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.6, pp.06FG08-1 | - |
dc.identifier.doi | 10.7567/JJAP.54.06FG08 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.scopusid | 2-s2.0-84930721449 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/12771 | - |
dc.identifier.url | http://iopscience.iop.org/1347-4065/54/6S1/06FG08/ | - |
dc.identifier.wosid | 000358264900029 | - |
dc.language | 영어 | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Extended design window of resonant plasma-wave transistor for terahertz emitter by considering degenerate carrier velocity model with Fermi-Dirac distribution | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | TIME-DOMAIN SPECTROSCOPY | - |
dc.subject.keywordPlus | SECURITY APPLICATIONS | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | INSPECTION | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | ANTENNA | - |
dc.subject.keywordPlus | SYSTEM | - |
dc.subject.keywordPlus | DNA | - |
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