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Kim, Seong-Jin
Bio-inspired Microsystems Lab (BiML)
Research Interests
  • Integrated analog-mixed signal circuit design, semiconductor sensor interface circuits

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A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well

Cited 3 times inthomson ciCited 8 times inthomson ci
Title
A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well
Author
Han, Sang-WookKim, Seong-JinYoon, Euisik
Issue Date
2005-06
Publisher
IEEK PUBLICATION CENTER
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.5, no.2, pp.102 - 106
Abstract
A low dark current CMOS image sensor pixel which can be easily implemented using a standard CMOS technology without any process modification is presented. Dark current is mainly generated from the interface region between the shallow trench isolation (STI) and the active region. The proposed pixel can reduce dark current by separating the STI region from a photodiode, using a simple layout modification to enclose the photodiode junction with the P-well. A test sensor array has been fabricated using 0.18 mum standard CMOS process and its performance characterised. The dark current of the proposed pixel has been measured as 0.93fA/pixel, which is by a factor of two smaller than that of the conventional design
URI
https://scholarworks.unist.ac.kr/handle/201301/12451
URL
https://www.koreascience.or.kr/article/JAKO200527543095564.page
ISSN
1598-1657
Appears in Collections:
EE_Journal Papers
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