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Kim, Seong-Jin
Bio-inspired Microsystems Lab (BiML)
Research Interests
  • Integrated analog-mixed signal circuit design, semiconductor sensor interface circuits

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A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well

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dc.contributor.author Han, Sang-Wook ko
dc.contributor.author Kim, Seong-Jin ko
dc.contributor.author Yoon, Euisik ko
dc.date.available 2015-07-23T02:14:14Z -
dc.date.created 2015-07-16 ko
dc.date.issued 2005-06 ko
dc.identifier.citation JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.5, no.2, pp.102 - 106 ko
dc.identifier.issn 1598-1657 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/12451 -
dc.description.abstract A low dark current CMOS image sensor pixel which can be easily implemented using a standard CMOS technology without any process modification is presented. Dark current is mainly generated from the interface region between the shallow trench isolation (STI) and the active region. The proposed pixel can reduce dark current by separating the STI region from a photodiode, using a simple layout modification to enclose the photodiode junction with the P-well. A test sensor array has been fabricated using 0.18 mum standard CMOS process and its performance characterised. The dark current of the proposed pixel has been measured as 0.93fA/pixel, which is by a factor of two smaller than that of the conventional design ko
dc.description.statementofresponsibility close -
dc.language 영어 ko
dc.publisher IEEK PUBLICATION CENTER ko
dc.title A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well ko
dc.type ARTICLE ko
dc.type.rims ART ko
dc.description.wostc 3 *
dc.description.scopustc 8 *
dc.date.tcdate 2015-12-28 *
dc.date.scptcdate 2015-11-04 *
dc.identifier.url https://www.koreascience.or.kr/article/JAKO200527543095564.page ko
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