Interplay between Fermi Surface Topology and Ordering in URu2Si2 Revealed through Abrupt Hall Coefficient Changes in Strong Magnetic Fields
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- Interplay between Fermi Surface Topology and Ordering in URu2Si2 Revealed through Abrupt Hall Coefficient Changes in Strong Magnetic Fields
- Oh, Yoon Seok; Kim, Kee Hoon; SHarma, PA; Harrison, N; Amitsuka, H; Mydosh, JA
- Issue Date
- AMER PHYSICAL SOC
- PHYSICAL REVIEW LETTERS, v.98, no.1, pp.016401
- Temperature- and field-dependent measurements of the Hall effect of pure and 4% Rh-doped URu2Si2 reveal low density (0.03 hole/U) high mobility carriers to be unique to the "hidden order" phase and consistent with an itinerant density-wave order parameter. The Fermi surface undergoes a series of abrupt changes as the magnetic field is increased. When combined with existing de Haas-van Alphen data, the Hall data expose a strong interplay between the stability of the "hidden order," the degree of polarization of the Fermi liquid, and the Fermi surface topology.
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