dc.citation.number |
1 |
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dc.citation.startPage |
016401 |
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dc.citation.title |
PHYSICAL REVIEW LETTERS |
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dc.citation.volume |
98 |
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dc.contributor.author |
Oh, Yoon Seok |
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dc.contributor.author |
Kim, Kee Hoon |
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dc.contributor.author |
SHarma, PA |
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dc.contributor.author |
Harrison, N |
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dc.contributor.author |
Amitsuka, H |
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dc.contributor.author |
Mydosh, JA |
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dc.date.accessioned |
2023-12-22T09:37:30Z |
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dc.date.available |
2023-12-22T09:37:30Z |
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dc.date.created |
2015-07-08 |
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dc.date.issued |
2007-01 |
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dc.description.abstract |
Temperature- and field-dependent measurements of the Hall effect of pure and 4% Rh-doped URu2Si2 reveal low density (0.03 hole/U) high mobility carriers to be unique to the "hidden order" phase and consistent with an itinerant density-wave order parameter. The Fermi surface undergoes a series of abrupt changes as the magnetic field is increased. When combined with existing de Haas-van Alphen data, the Hall data expose a strong interplay between the stability of the "hidden order," the degree of polarization of the Fermi liquid, and the Fermi surface topology. |
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dc.identifier.bibliographicCitation |
PHYSICAL REVIEW LETTERS, v.98, no.1, pp.016401 |
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dc.identifier.doi |
10.1103/PhysRevLett.98.016401 |
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dc.identifier.issn |
0031-9007 |
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dc.identifier.scopusid |
2-s2.0-33846348339 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/12407 |
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dc.identifier.url |
http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.98.016401 |
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dc.identifier.wosid |
000243379700037 |
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dc.language |
영어 |
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dc.publisher |
AMER PHYSICAL SOC |
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dc.title |
Interplay between Fermi Surface Topology and Ordering in URu2Si2 Revealed through Abrupt Hall Coefficient Changes in Strong Magnetic Fields |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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