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오윤석

Oh, Yoon Seok
Laboratory for Strong Correlation in Quantum Materials
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dc.citation.number 1 -
dc.citation.startPage 016401 -
dc.citation.title PHYSICAL REVIEW LETTERS -
dc.citation.volume 98 -
dc.contributor.author Oh, Yoon Seok -
dc.contributor.author Kim, Kee Hoon -
dc.contributor.author SHarma, PA -
dc.contributor.author Harrison, N -
dc.contributor.author Amitsuka, H -
dc.contributor.author Mydosh, JA -
dc.date.accessioned 2023-12-22T09:37:30Z -
dc.date.available 2023-12-22T09:37:30Z -
dc.date.created 2015-07-08 -
dc.date.issued 2007-01 -
dc.description.abstract Temperature- and field-dependent measurements of the Hall effect of pure and 4% Rh-doped URu2Si2 reveal low density (0.03 hole/U) high mobility carriers to be unique to the "hidden order" phase and consistent with an itinerant density-wave order parameter. The Fermi surface undergoes a series of abrupt changes as the magnetic field is increased. When combined with existing de Haas-van Alphen data, the Hall data expose a strong interplay between the stability of the "hidden order," the degree of polarization of the Fermi liquid, and the Fermi surface topology. -
dc.identifier.bibliographicCitation PHYSICAL REVIEW LETTERS, v.98, no.1, pp.016401 -
dc.identifier.doi 10.1103/PhysRevLett.98.016401 -
dc.identifier.issn 0031-9007 -
dc.identifier.scopusid 2-s2.0-33846348339 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/12407 -
dc.identifier.url http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.98.016401 -
dc.identifier.wosid 000243379700037 -
dc.language 영어 -
dc.publisher AMER PHYSICAL SOC -
dc.title Interplay between Fermi Surface Topology and Ordering in URu2Si2 Revealed through Abrupt Hall Coefficient Changes in Strong Magnetic Fields -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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