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Kim, Seong-Jin
Bio-inspired Microsystems Lab (BiML)
Research Interests
  • Integrated analog-mixed signal circuit design, semiconductor sensor interface circuits

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A 3-D Time-of-Flight CMOS Image Sensor with Pinned-Photodiode Pixel Structure

Cited 11 times inthomson ciCited 16 times inthomson ci
Title
A 3-D Time-of-Flight CMOS Image Sensor with Pinned-Photodiode Pixel Structure
Author
Kim, Seong-JinHan, Sang-WookKang, ByongminLee, KeechangKim, James D. K.Kim, Chang-Yeong
Issue Date
2010-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v.31, no.11, pp.1272 - 1274
Abstract
A pixel architecture for providing not only normal 2-D images but also depth information by using a conventional pinned photodiode is presented. This pixel architecture allows the sensor to generate a real-time 3-D image of an arbitrary object. The operation of the pixel is based on the time-of-flight principle detecting the time delay between the emitted and reflected infrared light pulses in a depth image mode. The pixel contains five transistors. Compared to the conventional 4-T CMOS image sensor, the new pixel includes an extra optimized transfer gate for high-speed charge transfer. A fill factor of more than 60% is achieved with a 12 × 12 μm2 size for increasing the sensitivity. A fabricated prototype sensor successfully captures 64 × 16 depth images between 1 and 4 m at a 5-MHz modulation frequency. The depth inaccuracy is measured under 2% at 1 m and 4% at 4 m and is verified by noise analysis.
URI
https://scholarworks.unist.ac.kr/handle/201301/12305
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5560722
DOI
10.1109/LED.2010.2066254
ISSN
0741-3106
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