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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 1274 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1272 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 31 | - |
dc.contributor.author | Kim, Seong-Jin | - |
dc.contributor.author | Han, Sang-Wook | - |
dc.contributor.author | Kang, Byongmin | - |
dc.contributor.author | Lee, Keechang | - |
dc.contributor.author | Kim, James D. K. | - |
dc.contributor.author | Kim, Chang-Yeong | - |
dc.date.accessioned | 2023-12-22T06:40:17Z | - |
dc.date.available | 2023-12-22T06:40:17Z | - |
dc.date.created | 2015-07-16 | - |
dc.date.issued | 2010-11 | - |
dc.description.abstract | A pixel architecture for providing not only normal 2-D images but also depth information by using a conventional pinned photodiode is presented. This pixel architecture allows the sensor to generate a real-time 3-D image of an arbitrary object. The operation of the pixel is based on the time-of-flight principle detecting the time delay between the emitted and reflected infrared light pulses in a depth image mode. The pixel contains five transistors. Compared to the conventional 4-T CMOS image sensor, the new pixel includes an extra optimized transfer gate for high-speed charge transfer. A fill factor of more than 60% is achieved with a 12 × 12 μm2 size for increasing the sensitivity. A fabricated prototype sensor successfully captures 64 × 16 depth images between 1 and 4 m at a 5-MHz modulation frequency. The depth inaccuracy is measured under 2% at 1 m and 4% at 4 m and is verified by noise analysis. | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.31, no.11, pp.1272 - 1274 | - |
dc.identifier.doi | 10.1109/LED.2010.2066254 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.scopusid | 2-s2.0-78049298179 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/12305 | - |
dc.identifier.url | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5560722 | - |
dc.identifier.wosid | 000283448300033 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A 3-D Time-of-Flight CMOS Image Sensor with Pinned-Photodiode Pixel Structure | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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