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Oh, Yoon Seok
Laboratory for Strong Correlation in Quantum Materials
Research Interests
  • Multiferroic
  • Ferroelectric
  • Quantum Magnetism

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High carrier mobility in transparent Ba1− xLaxSnO3 crystals with a wide band gap

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Title
High carrier mobility in transparent Ba1− xLaxSnO3 crystals with a wide band gap
Author
Luo, XOh, Yoon SeokSirenko, AGao, PTyson, TAChar, KCheong, SW
Issue Date
2012-04
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.100, no.17, pp.172112
Abstract
We discovered that perovskite (Ba,La)SnO 3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba 0.98La 0.02SnO 3 crystals with the n-type carrier concentration of ∼8-10 × 10 19cm -3 is found to be ∼103 cm 2 V -1 s -1 at room temperature, and the precise measurement of the band gap δ of a BaSnO 3 crystal shows δ = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO 3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices. © 2012 American Institute of Physics.
URI
https://scholarworks.unist.ac.kr/handle/201301/12054
URL
http://scitation.aip.org/content/aip/journal/apl/100/17/10.1063/1.4709415
DOI
10.1063/1.4709415
ISSN
0003-6951
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PHY_Journal Papers
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