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Oh, Yoon Seok
Laboratory for Strong Correlation in Quantum Materials
Research Interests
  • Multiferroic
  • Ferroelectric
  • Quantum Magnetism

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High carrier mobility in transparent Ba1− xLaxSnO3 crystals with a wide band gap

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dc.contributor.author Luo, X ko
dc.contributor.author Oh, Yoon Seok ko
dc.contributor.author Sirenko, A ko
dc.contributor.author Gao, P ko
dc.contributor.author Tyson, TA ko
dc.contributor.author Char, K ko
dc.contributor.author Cheong, SW ko
dc.date.available 2015-07-15T00:38:26Z -
dc.date.created 2015-07-08 ko
dc.date.issued 2012-04 ko
dc.identifier.citation APPLIED PHYSICS LETTERS, v.100, no.17, pp.172112 ko
dc.identifier.issn 0003-6951 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/12054 -
dc.description.abstract We discovered that perovskite (Ba,La)SnO 3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba 0.98La 0.02SnO 3 crystals with the n-type carrier concentration of ∼8-10 × 10 19cm -3 is found to be ∼103 cm 2 V -1 s -1 at room temperature, and the precise measurement of the band gap δ of a BaSnO 3 crystal shows δ = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO 3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices. © 2012 American Institute of Physics. ko
dc.description.statementofresponsibility open -
dc.language 영어 ko
dc.publisher AMER INST PHYSICS ko
dc.title High carrier mobility in transparent Ba1− xLaxSnO3 crystals with a wide band gap ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84860341471 ko
dc.identifier.wosid 000303340300043 ko
dc.type.rims ART ko
dc.description.wostc 34 *
dc.description.scopustc 27 *
dc.date.tcdate 2015-12-28 *
dc.date.scptcdate 2015-11-04 *
dc.identifier.doi 10.1063/1.4709415 ko
dc.identifier.url http://scitation.aip.org/content/aip/journal/apl/100/17/10.1063/1.4709415 ko
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