File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher


Oh, Yoon Seok
Laboratory for Strong Correlation in Quantum Materials
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Full metadata record

DC Field Value Language
dc.citation.number 17 -
dc.citation.startPage 172112 -
dc.citation.title APPLIED PHYSICS LETTERS -
dc.citation.volume 100 - Luo, X - Oh, Yoon Seok - Sirenko, A - Gao, P - Tyson, TA - Char, K - Cheong, SW - 2023-12-22T05:12:15Z - 2023-12-22T05:12:15Z - 2015-07-08 - 2012-04 -
dc.description.abstract We discovered that perovskite (Ba,La)SnO 3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba 0.98La 0.02SnO 3 crystals with the n-type carrier concentration of ∼8-10 × 10 19cm -3 is found to be ∼103 cm 2 V -1 s -1 at room temperature, and the precise measurement of the band gap δ of a BaSnO 3 crystal shows δ = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO 3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices. © 2012 American Institute of Physics. -
dc.identifier.bibliographicCitation APPLIED PHYSICS LETTERS, v.100, no.17, pp.172112 -
dc.identifier.doi 10.1063/1.4709415 -
dc.identifier.issn 0003-6951 -
dc.identifier.scopusid 2-s2.0-84860341471 -
dc.identifier.uri -
dc.identifier.url -
dc.identifier.wosid 000303340300043 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title High carrier mobility in transparent Ba1− xLaxSnO3 crystals with a wide band gap -
dc.type Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -


Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.