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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Effects of growth temperatures on the characteristics of n-GaN nanorods-graphene hybrid structures

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Title
Effects of growth temperatures on the characteristics of n-GaN nanorods-graphene hybrid structures
Author
Kang, SanMandal, ArjunPark, Ji-HyeonUm, Dae-YoungChu, Jae HwanKwon, Soon-YongLee, Cheul-Ro
Issue Date
2015-09
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.644, pp.808 - 813
Abstract
The effects of different growth temperatures of n-GaN nanorods (NRs) on the material and electrical properties of n-GaN NRs-graphene hybrid device structures are being demonstrated for the first time. A high quality graphene transfer method was applied for transferring the graphene layer on Si (1 1 1) substrate and n-GaN NRs were synthesized on the graphene layer on Si using a metal organic chemical vapor deposition (MOCVD) process of high V/III ratio. No metal-catalyst or droplet seeds were formed when growing n-GaN NRs. The growth temperature of the n-GaN NRs was varied from 860 °C to 900 °C. Raman spectroscopy confirmed the prominent existence of an undamaged graphene layer in all of the highly-matched hybrid device structures under study. Improvement in the structural, crystalline and material properties was established from FE-SEM, XRD and PL studies for the hybrid structure where n-GaN NRs were grown at 890 °C. The same hybrid structure also showed a ten-fold enhancement in photocurrent along with increased sensitivity and photoresponsivity. Therefore, it can be concluded that a suitable growth temperature of n-GaN NRs is the most important factor for the fabrication of high quality n-GaN NRs-graphene hybrid structures. © 2015 Elsevier B.V. All rights reserved
URI
https://scholarworks.unist.ac.kr/handle/201301/11662
URL
http://www.sciencedirect.com/science/article/pii/S0925838815013912
DOI
10.1016/j.jallcom.2015.05.098
ISSN
0925-8388
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