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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 813 | - |
dc.citation.startPage | 808 | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 644 | - |
dc.contributor.author | Kang, San | - |
dc.contributor.author | Mandal, Arjun | - |
dc.contributor.author | Park, Ji-Hyeon | - |
dc.contributor.author | Um, Dae-Young | - |
dc.contributor.author | Chu, Jae Hwan | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Lee, Cheul-Ro | - |
dc.date.accessioned | 2023-12-22T00:46:39Z | - |
dc.date.available | 2023-12-22T00:46:39Z | - |
dc.date.created | 2015-06-29 | - |
dc.date.issued | 2015-09 | - |
dc.description.abstract | The effects of different growth temperatures of n-GaN nanorods (NRs) on the material and electrical properties of n-GaN NRs-graphene hybrid device structures are being demonstrated for the first time. A high quality graphene transfer method was applied for transferring the graphene layer on Si (1 1 1) substrate and n-GaN NRs were synthesized on the graphene layer on Si using a metal organic chemical vapor deposition (MOCVD) process of high V/III ratio. No metal-catalyst or droplet seeds were formed when growing n-GaN NRs. The growth temperature of the n-GaN NRs was varied from 860 °C to 900 °C. Raman spectroscopy confirmed the prominent existence of an undamaged graphene layer in all of the highly-matched hybrid device structures under study. Improvement in the structural, crystalline and material properties was established from FE-SEM, XRD and PL studies for the hybrid structure where n-GaN NRs were grown at 890 °C. The same hybrid structure also showed a ten-fold enhancement in photocurrent along with increased sensitivity and photoresponsivity. Therefore, it can be concluded that a suitable growth temperature of n-GaN NRs is the most important factor for the fabrication of high quality n-GaN NRs-graphene hybrid structures. © 2015 Elsevier B.V. All rights reserved | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.644, pp.808 - 813 | - |
dc.identifier.doi | 10.1016/j.jallcom.2015.05.098 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.scopusid | 2-s2.0-84929649839 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/11662 | - |
dc.identifier.url | http://www.sciencedirect.com/science/article/pii/S0925838815013912 | - |
dc.identifier.wosid | 000357143900117 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Effects of growth temperatures on the characteristics of n-GaN nanorods-graphene hybrid structures | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Chemistry; Materials Science; Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | GaN nanorods | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Growth temperature | - |
dc.subject.keywordAuthor | Hybrid structures | - |
dc.subject.keywordAuthor | Metal organic chemical vapor deposition | - |
dc.subject.keywordAuthor | Ultraviolet photoconductive devices | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | NANOWIRES | - |
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