In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
Cited 0 times inCited 0 times in
- In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
- Oh, Il-Kwon; Kim, Kangsik; Lee, Zonghoon; Song, Jeong-Gyu; Lee, Chang Wan; Thompson, David; Lee, Han-Bo-Ram; Kim, Woo-Hee; Maeng, Wan Joo; Kim, Hyungjun
- Issue Date
- ROYAL SOC CHEMISTRYROYAL SOC CHEMISTRY
- JOURNAL OF MATERIALS CHEMISTRY C, v.3, no.19, pp.4852 - 4858
- Comparative studies of the in situ surface cleaning effect on Ge substrates using trimethyl aluminum (TMA) and dicyclopentadienyl magnesium (MgCp2) were performed. The surface cleaning process is the direct exposure of either a TMA or MgCp2 precursor on a Ge surface prior to the deposition of a HfO2 gate dielectric. Also, we studied a HfO2/Al2O3 and MgO bilayer on uncleaned Ge using the same precursors for comparison with surface treatment. From the correlation of chemical composition, line profile, atomic scale imaging and electrical evaluation, MgCp2 was the most effective method for reducing Ge diffusion into the HfO2 dielectric layer via the efficient surface cleaning process. MgCp2 cleaning produces thermally-stable Ge oxides while TMA cleaning reduces all types of Ge sub-oxides. As a result, the process can form a thermally-stable interface layer primarily composed of Ge3+, leading to better electrical properties than TMA
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
- There are no files associated with this item.
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.