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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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Physical analysis and design of resonant plasma-wave transistors for terahertz emitters
- Author(s)
- Park, Jong Yul, Kim, Sung-Ho, Hong, Sung-Min, Kim, Kyung Rok
- Issued Date
- 2015-03
- Citation
- IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.5, no.2, pp.244 - 250
- Abstract
- In this work, we performed physical analysis of resonant plasma-wave transistors (PWTs) for terahertz (THz) emitters. Through the analytical decomposition of plasma-waves into upstream and downstream focusing on the different phase velocity, we show that the reflection coefficient is over unity and newly introduce the PWT design window based on a simple 2-D plot, which can provide both the maximum channel length (Lmax) and operation frequency. By our design window analysis, strained silicon channel with a momentum relaxation time of 50-160 fs (i.e., channel mobility 500-1500 cm2/Vs) show technology-compatible Lmax as 12-40 nm with a tunable resonance frequency of 2-10 THz. © 2015 IEEE
- Publisher
- Institute of Electrical and Electronics Engineers
- ISSN
- 2156-342X
- Keyword (Author)
- Plasma-wave transistor (PWT), terahertz (THz), emitter, design window, maximum channel length, strained silicon, momentum relaxation time, mobility, resonance frequency
- Keyword
- CURRENT INSTABILITY, MOBILITY, CHANNEL, SI, ELECTRONICS, GENERATION, RADIATION, ARRAY
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