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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Physical analysis and design of resonant plasma-wave transistors for terahertz emitters

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Title
Physical analysis and design of resonant plasma-wave transistors for terahertz emitters
Author
Park, Jong YulKim, Sung-HoHong, Sung-MinKim, Kyung Rok
Issue Date
2015-03
Publisher
Institute of Electrical and Electronics Engineers
Citation
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.5, no.2, pp.244 - 250
Abstract
In this work, we performed physical analysis of resonant plasma-wave transistors (PWTs) for terahertz (THz) emitters. Through the analytical decomposition of plasma-waves into upstream and downstream focusing on the different phase velocity, we show that the reflection coefficient is over unity and newly introduce the PWT design window based on a simple 2-D plot, which can provide both the maximum channel length (Lmax) and operation frequency. By our design window analysis, strained silicon channel with a momentum relaxation time of 50-160 fs (i.e., channel mobility 500-1500 cm2/Vs) show technology-compatible Lmax as 12-40 nm with a tunable resonance frequency of 2-10 THz. © 2015 IEEE
URI
https://scholarworks.unist.ac.kr/handle/201301/11148
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7029115
DOI
10.1109/TTHZ.2015.2392630
ISSN
2156-342X
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