File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 250 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 244 | - |
| dc.citation.title | IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | - |
| dc.citation.volume | 5 | - |
| dc.contributor.author | Park, Jong Yul | - |
| dc.contributor.author | Kim, Sung-Ho | - |
| dc.contributor.author | Hong, Sung-Min | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.date.accessioned | 2023-12-22T01:37:43Z | - |
| dc.date.available | 2023-12-22T01:37:43Z | - |
| dc.date.created | 2015-04-01 | - |
| dc.date.issued | 2015-03 | - |
| dc.description.abstract | In this work, we performed physical analysis of resonant plasma-wave transistors (PWTs) for terahertz (THz) emitters. Through the analytical decomposition of plasma-waves into upstream and downstream focusing on the different phase velocity, we show that the reflection coefficient is over unity and newly introduce the PWT design window based on a simple 2-D plot, which can provide both the maximum channel length (Lmax) and operation frequency. By our design window analysis, strained silicon channel with a momentum relaxation time of 50-160 fs (i.e., channel mobility 500-1500 cm2/Vs) show technology-compatible Lmax as 12-40 nm with a tunable resonance frequency of 2-10 THz. © 2015 IEEE | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.5, no.2, pp.244 - 250 | - |
| dc.identifier.doi | 10.1109/TTHZ.2015.2392630 | - |
| dc.identifier.issn | 2156-342X | - |
| dc.identifier.scopusid | 2-s2.0-85027957137 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/11148 | - |
| dc.identifier.url | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7029115 | - |
| dc.identifier.wosid | 000351080300012 | - |
| dc.language | 영어 | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Physical analysis and design of resonant plasma-wave transistors for terahertz emitters | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Optics; Physics, Applied | - |
| dc.relation.journalResearchArea | Engineering; Optics; Physics | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | Plasma-wave transistor (PWT) | - |
| dc.subject.keywordAuthor | terahertz (THz) | - |
| dc.subject.keywordAuthor | emitter | - |
| dc.subject.keywordAuthor | design window | - |
| dc.subject.keywordAuthor | maximum channel length | - |
| dc.subject.keywordAuthor | strained silicon | - |
| dc.subject.keywordAuthor | momentum relaxation time | - |
| dc.subject.keywordAuthor | mobility | - |
| dc.subject.keywordAuthor | resonance frequency | - |
| dc.subject.keywordPlus | CURRENT INSTABILITY | - |
| dc.subject.keywordPlus | MOBILITY | - |
| dc.subject.keywordPlus | CHANNEL | - |
| dc.subject.keywordPlus | SI | - |
| dc.subject.keywordPlus | ELECTRONICS | - |
| dc.subject.keywordPlus | GENERATION | - |
| dc.subject.keywordPlus | RADIATION | - |
| dc.subject.keywordPlus | ARRAY | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.