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김광수

Kim, Kwang S.
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Controllable n-Type Doping on CVD-Grown Single- and Double-Layer Graphene Mixture

Author(s)
Xu, WentaoWang, LihuaLiu, YiwenThomas, SimilSeo, Hong-KyuKim, Kwang-IkKim, Kwang S.Lee, Tae-Woo
Issued Date
2015-03
DOI
10.1002/adma.201405353
URI
https://scholarworks.unist.ac.kr/handle/201301/10843
Fulltext
http://onlinelibrary.wiley.com/doi/10.1002/adma.201405353/abstract
Citation
ADVANCED MATERIALS, v.27, no.9, pp.1619 - 1623
Abstract
n-Type doping of mixed single- and double-layer graphene grown by chemical vapor deposition (CVD) using decamethyl­cobaltocene reveals a local-quasilinear relationship between the work function and the logarithm of the dopant solution concentration. The relationship that arises from bandgap opening is deduced by comparing the relationship between the two factors for single- or double-layer graphene. This work has extensive applicability and practical significance in doping CVD-grown graphene.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
0935-9648
Keyword
CHEMICAL-VAPOR-DEPOSITIONFIELD-EFFECT TRANSISTORSCARBON NANOTUBESRECENT PROGRESSDIRAC POINTBAND-GAPNANORIBBONSELECTRODESCOPPERFILMS

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