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김광수

Kim, Kwang S.
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dc.citation.endPage 1623 -
dc.citation.number 9 -
dc.citation.startPage 1619 -
dc.citation.title ADVANCED MATERIALS -
dc.citation.volume 27 -
dc.contributor.author Xu, Wentao -
dc.contributor.author Wang, Lihua -
dc.contributor.author Liu, Yiwen -
dc.contributor.author Thomas, Simil -
dc.contributor.author Seo, Hong-Kyu -
dc.contributor.author Kim, Kwang-Ik -
dc.contributor.author Kim, Kwang S. -
dc.contributor.author Lee, Tae-Woo -
dc.date.accessioned 2023-12-22T01:38:09Z -
dc.date.available 2023-12-22T01:38:09Z -
dc.date.created 2015-03-13 -
dc.date.issued 2015-03 -
dc.description.abstract n-Type doping of mixed single- and double-layer graphene grown by chemical vapor deposition (CVD) using decamethyl­cobaltocene reveals a local-quasilinear relationship between the work function and the logarithm of the dopant solution concentration. The relationship that arises from bandgap opening is deduced by comparing the relationship between the two factors for single- or double-layer graphene. This work has extensive applicability and practical significance in doping CVD-grown graphene. -
dc.identifier.bibliographicCitation ADVANCED MATERIALS, v.27, no.9, pp.1619 - 1623 -
dc.identifier.doi 10.1002/adma.201405353 -
dc.identifier.issn 0935-9648 -
dc.identifier.scopusid 2-s2.0-84923796033 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/10843 -
dc.identifier.url http://onlinelibrary.wiley.com/doi/10.1002/adma.201405353/abstract -
dc.identifier.wosid 000350541100019 -
dc.language 영어 -
dc.publisher WILEY-V C H VERLAG GMBH -
dc.title Controllable n-Type Doping on CVD-Grown Single- and Double-Layer Graphene Mixture -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science; Physics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus CHEMICAL-VAPOR-DEPOSITION -
dc.subject.keywordPlus FIELD-EFFECT TRANSISTORS -
dc.subject.keywordPlus CARBON NANOTUBES -
dc.subject.keywordPlus RECENT PROGRESS -
dc.subject.keywordPlus DIRAC POINT -
dc.subject.keywordPlus BAND-GAP -
dc.subject.keywordPlus NANORIBBONS -
dc.subject.keywordPlus ELECTRODES -
dc.subject.keywordPlus COPPER -
dc.subject.keywordPlus FILMS -

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