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Park, Kibog
Emergent Materials & Devices Lab.
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dc.citation.endPage 1355 -
dc.citation.number 4 -
dc.citation.startPage 1351 -
dc.citation.title JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A -
dc.citation.volume 22 -
dc.contributor.author Ding, Y -
dc.contributor.author Park, Kibog -
dc.contributor.author Pelz, JP -
dc.contributor.author Palle, KC -
dc.contributor.author Mikhov, MK -
dc.contributor.author Skromme, BJ -
dc.date.accessioned 2023-12-22T10:45:38Z -
dc.date.available 2023-12-22T10:45:38Z -
dc.date.created 2014-11-10 -
dc.date.issued 2004-07 -
dc.description.abstract Using ballistic electron emission microscopy (BEEM), high-temperature- processing-induced 'double-stacking fault' cubic inclusions in 4H-Si-C were studied. BEEM is a three-terminal extension of scanning tunneling microscopy (STM) that can probe the local electronic transport properties of M/S interfaces with nanometer-scale spatial resolution and <10 meV energy resolution. It was found that measured spatial variations in the BEEM current were related to the inclusion orientation and local surface step structure. The observation of anomalously low schottky barrier height (SBH) suggested the existence of a triple-or quadruple-stacking fault inclusion. -
dc.identifier.bibliographicCitation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.22, no.4, pp.1351 - 1355 -
dc.identifier.doi 10.1116/1.1705644 -
dc.identifier.issn 0734-2101 -
dc.identifier.scopusid 2-s2.0-4444250984 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/10073 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=4444250984 -
dc.identifier.wosid 000223322000044 -
dc.language 영어 -
dc.publisher A V S AMER INST PHYSICS -
dc.title Cubic inclusions in 4H-SIC studied with ballistic electron-emission microscopy -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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