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최경진

Choi, Kyoung Jin
Energy Conversion Materials Lab.
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Gas sensing properties of defect-controlled ZnO-nanowire gas sensor

Author(s)
Ahn, M. -W.Park, K. -S.Heo, J. -H.Park, J. -G.Kim, D. -W.Choi, Kyoung JinLee, J. -H.Hong, S. -H.
Issued Date
2008-12
DOI
10.1063/1.3046726
URI
https://scholarworks.unist.ac.kr/handle/201301/10026
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=58149268952
Citation
APPLIED PHYSICS LETTERS, v.93, no.26, pp.263103-1 - 263103-2
Abstract
The effect of oxygen-vacancy-related defects on gas-sensing properties of ZnO-nanowire gas sensors was investigated. Gas sensors were fabricated by growing ZnO nanowires bridging the gap between two prepatterned Au catalysts. The sensor displayed fast response and recovery behavior with a maximum sensitivity to NO2 gas at 225 °C. Gas sensitivity was found to be linearly proportional to the photoluminescence intensity of oxygen-vacancy-related defects in both as-fabricated and defect-controlled gas sensors by postannealing in Ar and H2 atmosphere. This result agrees well with previous theoretical prediction that oxygen vacancies play a role of preferential adsorption sites for NO2 molecules.
Publisher
AMER INST PHYSICS
ISSN
0003-6951
Keyword (Author)
adsorptionannealingcatalystsgas sensorsgoldII-VI semiconductorsnanotechnologynanowiresphotoluminescencevacancies (crystal)wide band gap semiconductorszinc compounds
Keyword
ZINC-OXIDE NANOWIRESTHIN-FILMSNO2EMISSIONFIELD

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