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Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate File

Choi, Gahyun , Yoon, Hoon Hahn , Jung, Sungchul , Jeon, Youngeun , Lee, Jung Yong , Bahng, Wook , Park, Kibog

Article Issue Date2015-12 View146
Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer File

Yoon, Hoon Hahn , Jung, Sungchul , Choi, Gahyun , Kim, Junhyung , Jeon, Youngeun , Kim, Yong Soo , Jeong, Hu Young , Kim, Kwanpyo , Kwon, Soon-Yong , Park, Kibog

Article Issue Date2017-01 View170
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