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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, metal oxide thin film, graphene, non-volatile memory, quantum transport

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Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer

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Title
Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer
Author
Yoon, Hoon HahnJung, SungchulChoi, GahyunKim, JunhyungJeon, YoungeunKim, Yong SooJeong, Hu YoungKim, KwanpyoKwon, Soon-YongPark, Kibog
Issue Date
2017-01
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.17, no.1, pp.44 - 49
Abstract
We report the systematic experimental studies demonstrating that a graphene layer inserted at metal/n-Si(001) interface is efficient to explore interface Fermi-level pinning effect. It is confirmed that an inserted graphene layer prevents atomic interdiffusion to form an atomically abrupt Schottky contact. The Schottky barriers of metal/graphene/n-Si(001) junctions show a very weak dependence on metal work-function, implying that the metal Fermi-level is almost completely pinned at charge neutrality level close to the valence band edge of Si. The atomically impermeable and electronically transparent properties of graphene can be used generally to form an intact Schottky contact for all semiconductors.
URI
https://scholarworks.unist.ac.kr/handle/201301/21159
URL
http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b03137
DOI
10.1021/acs.nanolett.6b03137
ISSN
1530-6984
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