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A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM File

Yoon, Hongil , Cha, Gi-Won , Yoo, Changsik , Kim, Nam-Jong , Kim, Keum-Yong , Lee, Chang Ho , Lim, Kyu-Nam , Lee, Kyuchan , Jeon, Jun-Young , Jung, Tae Sung , et al

Article Issue Date1999-11 View105
Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices File

Kim, Soo-Hyun , Kim, Jeong-Tae , Kwak, Nohjung , Kim, Jinwoong , Yoon, Tae-Sik , Sohn, Hyunchul

Article Issue Date2007-09 View100
First Demonstration of Top-Gate Enhancement- Mode ALD In2O3 FETs With High Thermal Budget of 600 °°C for DRAM Applications File

Lin, Jian-Yu , Zhang, Zhuocheng , Lin, Zehao , Niu, Chang , Zhang, Yizhi , Zhang, Yifan , Kim, Taehyun , Jang, H. , Sung, C. , Hong, M. , et al

Article Issue Date2024-10 View86
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