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Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit File File

Kim, Yeon Ho , Jiang, Wei , Lee, Donghun , Moon, Donghoon , Choi, Hyun-Young , Shin, June-Chul , Jeong, Yeonsu , Kim, Jong Chan , Lee, Jaeho , Huh, Woong , et al

Article Issue Date2024-07 View151
Competition between Bipolar Conduction Modes in Extrinsically p-Doped MoS2: Interaction with Gate Dielectric Matters File

Ko, Kyungmin , Huang, Jing , Kwon, Jaeeun , Jang, Mingyu , Cho, Hanbin , Yang, Seonguk , Kim, Sungyeon , Park, Sangwoo , Taniguchi, Takashi , Watanabe, Kenji , et al

Article Issue Date2025-01 View99
Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions File

Yang, Seunghoon , Cha, Janghwan , Kim, Jong Chan , Lee, Donghun , Huh, Woong , Kim, Yoonseok , Lee, Seong Won , Park, Hong-Gyu , Jeong, Hu Young , Hong, Suklyun , et al

Article Issue Date2020-04 View121
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